guo40-12no1 3~ rectifier bridge standard rectifier - ~ + ~ ~ part number guo40-12no1 backside: isolated features / advantages: applications: package: low forward voltage drop planar passivated chips easy to mount with one screw space and weight savings supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors gufp industry standard outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting base plate: plastic overmolded tab reduced weight isolation voltage: v~ 2500 rrm 1200 i40 fsm 370 dav v = v a a = = i 3~ rectifier ixys reserves the right to change limits, conditions and dimensions. 20131108c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
guo40-12no1 v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.06 r 4.3 k/w r min. 40 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 90 p tot 35 w t = 25c c r k/w 10 1200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.28 t = 25c vj 150 v f0 v 0.74 t = c vj 175 r f 16.3 m ? v 0.92 t = c vj i = a f v 10 1.23 i = a f 30 i = a f 30 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 10 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 370 400 495 480 a a a a 315 340 685 665 1200 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 0.50 ixys reserves the right to change limits, conditions and dimensions. 20131108c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
guo40-12no1 r thja thermal resistance junction to ambient k/w 50 ratings dma40u1800gu gufp 1800 package t op c m d nm 1.2 mounting torque 0.8 t vj c 175 virtual junction temperature -40 weight g 8.5 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 6.7 5.4 10.0 8.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 70 a per terminal 150 -40 terminal to terminal guo40-16no1 guo40-08no1 gufp gufp 1600 800 gufp similar part package voltage class DNA40U2200GU gufp 2200 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol guo40-12no1 514892 tube 14 guo40-12no1 standard 2080 2500 isol t stg c 150 storage temperature -40 threshold voltage v 0.74 m ? v 0 max r 0 max slope resistance * 13.7 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131108c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
guo40-12no1 _ ~ ~ ~ + s2 y2 y1 x1 x2 a2 c a3 a4 a5 a6 a e f 4x e e z2 z1 5x b 5x b2 l1 +1 +2 s1 q d l r ? p o min typ. max min typ. max a 5.40 5.50 5.60 0.213 0.217 0.221 a2 3.90 4.00 4.10 0.154 0.158 0.162 a3 0.95 1.00 1.10 0.037 0.039 0.043 a4 0.95 1.00 1.05 0.037 0.039 0.041 a5 1.60 1.70 1.80 0.063 0.067 0.071 a6 1.25 1.30 1.35 0.049 0.051 0.053 b 0.95 1.00 1.05 0.037 0.039 0.041 b2 1.95 2.00 2.05 0.077 0.079 0.081 c 0.45 0.50 0.55 0.018 0.020 0.022 d 24.80 25.00 25.20 0.977 0.985 0.993 e 34.70 35.00 35.30 1.367 1.379 1.391 e bsc 7.50 bsc 0.296 f 2.40 2.50 2.60 0.095 0.099 0.102 l 20.30 20.40 20.50 0.800 0.804 0.808 l1 3.70 3.75 3.80 0.146 0.148 0.150 o 17.40 17.50 17.60 0.686 0.690 0.693 ? p 4.10 4.20 4.30 0.162 0.165 0.169 q 9.20 9.30 9.40 0.362 0.366 0.370 ? / 2 r 1.77 0.070 s1 3.45 3.50 3.55 0.136 0.138 0.140 s2 1.45 1.50 1.55 0.057 0.059 0.061 t1 0.95 1.00 1.05 0.037 0.039 0.041 t2 0.95 1.00 1.05 0.037 0.039 0.041 x1 3.20 3.30 3.40 0.126 0.130 0.134 x2 1.90 2.00 2.10 0.075 0.079 0.083 y1 1.60 1.65 1.70 0.063 0.065 0.067 y2 4.65 4.70 4.75 0.183 0.185 0.187 z1 2.80 2.90 3.00 0.110 0.114 0.118 dim. millimeter inches - ~ + ~ ~ outlines gufp ixys reserves the right to change limits, conditions and dimensions. 20131108c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
guo40-12no1 0 1 1 0 200 400 600 800 v f [v] i f [a] 0.4 0.8 1.2 1.6 0 20 40 60 10 -3 10 -2 10 -1 10 0 150 200 250 300 1 10 100 1000 10000 0 1 2 3 4 5 0 255075100125150175 0481216 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0 10 20 30 40 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i f(av)m [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] constants for z thjc calculation: ir th (k/w) t i (s) 1 0.302 0.002 2 1.252 0.032 3 1.582 0.227 4 1.164 0.820 0.8 x v rrm 50 hz t vj =45c v r =0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =25c t vj =150c t vj =150c fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t vs. time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance junction to case vs. time per diode dc = 1 0.5 0.4 0.33 0.17 0.08 t vj =45c rectifier ixys reserves the right to change limits, conditions and dimensions. 20131108c data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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